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Número de pieza | NCV8603SN33T1G | |
Descripción | 300mA High Performance CMOS LDO Regulator | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NCV8603SN33T1G (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! NCV8603
300 mA High Performance
CMOS LDO Regulator with
Enable and Enhanced ESD
Protection
The NCV8603 provides 300 mA of output current at fixed voltage
options. It is designed for portable battery powered applications and
offers high performance features such as low power operation, fast
enable response time, and low dropout.
The device is designed to be used with low cost ceramic capacitors
and is packaged in the TSOP−5.
Features
Fast Enable Turn−on Time of 15 ms
Wide Supply Voltage Range Operating Range
Excellent Line and Load Regulation
Typical Noise Voltage of 50 mVrms without a Bypass Capacitor
Enhanced ESD Protection (HBM 3.5 kV, MM 200 V)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
Typical Applications
SMPS Post−Regulation
Hand−held Instrumentation & Audio Players
Noise Sensitive Circuits – VCO, RF Stages, etc.
Camcorders and Cameras
Portable Computing
VIN VOUT
GND
Driver w/
Current Limit
Thermal
Shutdown
+
-+
−1.25 V
http://onsemi.com
TSOP−5
SN SUFFIX
CASE 483
PIN CONNECTIONS
Vin 1
GND 2
5 Vout
ENABLE 3
4 NC
(Top View)
MARKING DIAGRAM
5
ADWAYWG
G
1
ADW
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 9 of this data sheet.
ENABLE
Figure 1. Simplified Block Diagram
Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 2
1
Publication Order Number:
NCV8603/D
1 page NCV8603
TYPICAL CHARACTERISTICS
6.0
5.0
4.0
3.0
2.0
ENABLE = 0 V
1.0
0
−40 −15 10 35 60 85 110 125
TA, TEMPERATURE (C)
Figure 7. Ground Current (Sleep Mode) vs.
Temperature
154
146 1.0 mA
138 300 mA
130
122
114−40 −20 0
20 40 60 80 100 120
TA, TEMPERATURE (C)
Figure 8. Ground Current vs. Temperature
160
140
120
100
80
60
40
20
0
0 1 2 3 4 56
Vin, INPUT VOLTAGE (V)
Figure 9. Ground Current vs. Input Voltage
http://onsemi.com
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet NCV8603SN33T1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
NCV8603SN33T1G | 300mA High Performance CMOS LDO Regulator | ON Semiconductor |
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