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Toshiba Semiconductor - NPN Transistor - 2SC5355

Numéro de référence C5355
Description NPN Transistor - 2SC5355
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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C5355 fiche technique
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5355
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC5355
Unit: mm
Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max)
High collector breakdown voltage: VCEO = 400 V
High DC current gain: hFE = 20 (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
600
400
7
5
7
1
1.5
25
150
55~150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7B5A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7B7A
Weight: 0.36 g (typ.)
1 2005-02-01

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