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Numéro de référence | BAS21AVD | ||
Description | High-voltage switching diodes | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
BAS21AVD
High-voltage switching diodes
1 August 2013
Product data sheet
1. General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• High switching speed: trr ≤ 50 ns
• Reverse voltage: VR ≤ 200 V
• Repetitive peak reverse voltage: VRRM ≤ 250 V
• Small SMD plastic package
• Low capacitance: Cd ≤ 5 pF
• AEC-Q101 qualified
• Repetitive peak forward current: IFRM ≤ 1 A
3. Applications
• High-voltage switching in surface-mounted circuits
• Automotive
• Communication
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per diode
IF
forward current
pulsed; tp ≤ 300 µs; δ ≤ 0.02
[1]
VR reverse voltage
Per diode
IR
reverse current
VR = 200 V; Tamb = 25 °C; pulsed;
tp ≤ 300 µs; δ ≤ 0.02
trr reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA;
RL = 100 Ω; Tamb = 25 °C
Min Typ Max Unit
- - 200 mA
- - 200 V
- 25 100 nA
- 16 50 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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Pages | Pages 11 | ||
Télécharger | [ BAS21AVD ] |
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