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NXP Semiconductors - High-voltage switching diodes

Numéro de référence BAS21AVD
Description High-voltage switching diodes
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BAS21AVD fiche technique
BAS21AVD
High-voltage switching diodes
1 August 2013
Product data sheet
1. General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High switching speed: trr ≤ 50 ns
Reverse voltage: VR ≤ 200 V
Repetitive peak reverse voltage: VRRM ≤ 250 V
Small SMD plastic package
Low capacitance: Cd ≤ 5 pF
AEC-Q101 qualified
Repetitive peak forward current: IFRM ≤ 1 A
3. Applications
High-voltage switching in surface-mounted circuits
Automotive
Communication
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per diode
IF
forward current
pulsed; tp ≤ 300 µs; δ ≤ 0.02
[1]
VR reverse voltage
Per diode
IR
reverse current
VR = 200 V; Tamb = 25 °C; pulsed;
tp ≤ 300 µs; δ ≤ 0.02
trr reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA;
RL = 100 Ω; Tamb = 25 °C
Min Typ Max Unit
- - 200 mA
- - 200 V
- 25 100 nA
- 16 50 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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