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PDF L8550 Data sheet ( Hoja de datos )
| Número de pieza | L8550 | |
| Descripción | TO-92 Plastic-Encapsulate Transistors | |
| Fabricantes | LRC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de L8550 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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LESHAN RADIO COMPANY, LTD.
TO-92 Plastic-Encapsulate Transistors
L8550 TRANSISTOR˄ PNP ˅
üTO 92
FEATURES
Power dissipation
PCM : 1
W
˄Tamb=25ć˅
Collector current
ICM: -1.5 A
Collector-base voltage
V(BR)CBO :- 40 V
Operating and storage junction temperature range
TJˈTstg: -55ć to +150ć
˄ ćELECTRICAL CHARACTERISTICS Tamb=25
unless
1.EMITTER
2. BASE
3. COLLECTOR
123
˅otherwise specified
Parameter
Symbol
Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= -100 A ˈ IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO
IC= -0.1 mA , IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100 Aˈ IC=0
-5
V
Collector cut-off current
ICBO VCB= -40 V , IE=0
-0.1 A
Collector cut-off current
ICEO VCE= -20 V , IE=0
-0.1 A
Emitter cut-off current
IEBO VEB= -5 V , IC=0
-0.1 A
DC current gain
hFE˄1˅
hFE˄2˅
VCE= -1V , IC=-100 mA
VCE=-1V , IC=-800 mA
85
40
300
Collector-emitter saturation voltage
VCE(sat)
IC=-800 m,IB=-80 mA
-0.5 V
Base-emitter saturation voltage
VBE(sat)
IC=-800mA,IB=-80 mA
-1.2 V
Transition frequency
VCE=-10 V, IC=-50mA
fT
f =30 MHz
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
L8550-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet L8550.PDF ] | |
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