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D6849 Datasheet دیتاشیت PDF دانلود
دیتاشیت - Inchange Semiconductor - 2SD6849
| شماره قطعه | D6849 | ||
| شرح مفصل | 2SD6849 | ||
| تولید کننده | Inchange Semiconductor | ||
| آرم |  |
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD649
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Reliability
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCES
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage
wwwEmitter-Base Voltage
VALUE
UNIT
1500
V
1500
V
5V
www.DataSheICet4U.comCollector Current- Continuous 3 A
ICP Collector Current-Pulse
PC
Collector Power Dissipation
@ TC≤90℃
TJ Junction Temperature
5A
35 W
130 ℃
Tstg Storage Temperature Range
-65~130
℃
isc Website：www.iscsemi.cn
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| قانون اساسی | صفحه 2 | ||
| دانلود | [ D6849 دیتاشیت ] | ||
دیتاشیت توصیه
| شماره قطعه | شرح مفصل | تولید کنندگان |
| D6849 | 2SD6849 | Inchange Semiconductor |
| US18650VTC5A | Lithium-Ion Battery |  Sony |
| TSPC106 | PCI Bus Bridge Memory Controller |  ATMEL |
| TP9380 | NPN SILICON RF POWER TRANSISTOR |  Advanced Semiconductor |
| www.DataSheetWiki.com | 2020 | تماس با ما | جستجو |