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IPB200N25N3G fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPB200N25N3G
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPB200N25N3G fiche technique
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
250 V
20 mW
64 A
Type
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Package
Marking
PG-TO263-3
200N25N
PG-TO220-3
200N25N
PG-TO262-3
200N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=47 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
64
46
256
320
10
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.4
page 1
2011-07-14

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