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Número de pieza | WNM2027 | |
Descripción | N-Channel MOSFET | |
Fabricantes | TY Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WNM2027 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Product specification
WNM2027
N-Channel, 20V, 3.6A, Power MOSFET
V(BR)DSS
20
Rds(on)
(Max. m)
45 @ 4.5V
55 @ 2.5V
66 @ 1.8V
Id
(A)
3.6
3.1
1.5
Descriptions
The WNM2027 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM2027 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
SOT-23
D
3
12
GS
Configuration (Top View)
3
WT6*
12
WT6
*
= Device Code
= Month (A~Z)
Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
Order Information
Device
Package
WNM2027-3/TR SOT-23
Shipping
3000/Tape&Reel
http://www.twtysemi.com
1 of 3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet WNM2027.PDF ] |
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