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WNM2020 fiches techniques PDF

TY Semiconductor - N-Channel MOSFET

Numéro de référence WNM2020
Description N-Channel MOSFET
Fabricant TY Semiconductor 
Logo TY Semiconductor 





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WNM2020 fiche technique
Product specification
WNM2020
N-Channel, 20V, 0.90A, Small Signal MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.320@ VGS=1.8V
Descriptions
SOT-23
The WNM2020 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product WNM2020 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
D
3
12
GS
Pin configuration (Top view)
3
W28*
12
W28 = Device Code
* = Month (A~Z)
Marking
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
z
Order information
Device
Package
Shipping
WNM2020-3/TR SOT-23 3000/Reel&Tape
http://www.twtysemi.com
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