|
|
PDF FCPF380N60E Data sheet ( Hoja de datos )
| Número de pieza | FCPF380N60E | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FCPF380N60E (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
FCP380N60E / FCPF380N60E
600V N-Channel MOSFET
March 2012
SuperFET® II
Features
• 650V @TJ = 150°C
• Max. RDS(on) = 380mΩ
• Ultra Low Gate Charge (Typ. Qg = 34nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 97pF)
• 100% Avalanche Tested
Description
SuperFET®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET®II is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GDS
TO-220
GD S
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
S
FCP380N60E FCPF380N60E Units
600 V
±20 V
(f > 1Hz)
±30
V
10.2 10.2*
A
6.4 6.4*
(Note 1)
30.6
30.6*
A
(Note 2)
211.6
mJ
(Note 1)
2.3
A
(Note 1)
1.06
mJ
(Note 3)
20
100
V/ns
106 31
0.85 0.25
-55 to +150
W
W/oC
oC
300 oC
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
FCP380N60E FCPF380N60E Units
1.18 4
0.5 0.5 oC/W
62.5 62.5
©2012 Fairchild Semiconductor Corporation
FCP380N60E / FCPF380N60E Rev. C4
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve - FCP380N60E
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 1.18oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
100
Figure 14. Transient Thermal Response Curve - FCPF380N60E
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
Rectangular Pulse Duration [sec]
10 100
FCP380N60E / FCPF380N60E Rev. C4
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCPF380N60E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FCPF380N60 | N-Channel MOSFET | Fairchild Semiconductor |
| FCPF380N60E | N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |