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PDF K3994 Data sheet ( Hoja de datos )
| Número de pieza | K3994 | |
| Descripción | MOSFET ( Transistor ) - 2SK3994 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3994 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3994
www.DataSheet4U.com
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK3994
Switching Regulator, DC/DC Converter Applications
Motor Drive Applications
Unit: mm
z Low drain−source ON-resistance
: RDS (ON) = 90 mΩ (typ.)
z High forward transfer admittance
: |Yfs| = 10 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)
z Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
250
250
±30
20
80
45
487
20
4.5
150
−55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
2.78 °C / W
62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.06 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29
1 page  
2SK3994
www.DataSheet4U.com
100
ＩＤ max
( puls e) ＊
10
ＩＤ max
( c ontinuous ) ＊
Safe operating area
1m s *
１00μs*
1
DC operation
Tc=25℃
0.1
＊ Single nonrepetitive
Ta=25℃
Curves must be derated
linealy with increase in
temperature.
0.01
1 10
ＶＤＳＳ m ax．
100
Drain-source voltage ＶＤＳ （Ｖ）
1000
EAS – Tch
500
400
300
200
100
0
25 50
75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 50 V, L = 2.06 mH
Waveform
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3994.PDF ] | |
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