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MBR1060FCT Datasheet دیتاشیت PDF دانلود

دیتاشیت - Pan Jit - 10 AMPERES SCHOTTKY BARRIER RECTIFIERS

شماره قطعه MBR1060FCT
شرح مفصل 10 AMPERES SCHOTTKY BARRIER RECTIFIERS
تولید کننده Pan Jit 
آرم Pan Jit 


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MBR1060FCT شرح
MBR1040FCT SERIES
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 40 to 200 Volts CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
Lead free in comply with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.406(10.3)
0.381(9.7)
0.134(3.4)
0 . 11 8 ( 3 . 0 )
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.100(2.55)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0 . 11 4 ( 2 . 9 )
0 . 11 4 ( 2 . 9 )
0.098(2.5)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL MBR1040FCT MBR1045FCT MBR1050FCT MBR1060FCT MBR1080FCT MBR1090FCT MBR10100FCT MBR10150FCT MBR10200FCT UNITS
Maximum Recurrent Peak Reverse Voltage V RRM
40
45
50
60
80
90
100 150
200 V
Maximum RMS Voltage
V RMS
28
31.5
35
42
56
63
70
105
140 V
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Current
(See fig.1)
Peak Forward Surge Current : 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
IF ( AV )
IFSM
Maximum Forward Voltage at 5A, per leg
VF
40 45
0.7
50 60
0.75
80 90 100 150 200 V
10 A
150 A
0.8 0.9 V
Maximum DC Reverse Current T =25OC
J
at Rated DC Blocking Voltage TJ=125OC
Typical Thermal Resistance
Operating and Storage Junction
Temp erature Ra ng e
IR
RΘJC
TJ,TSTG -55 to + 150
0.05
20
2
-65 to + 175
mA
OC / W
OC
Notes :
Both Bonding and Chip structure are available.
April 21,2011-REV.05
PAGE . 1

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