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Advanced Power Electronics - AP9435GH

Numéro de référence 9435GH
Description AP9435GH
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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9435GH fiche technique
Advanced Power
Electronics Corp.
AP9435GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
D
Simple Drive Requirement
Fast Switching
G
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-252/TO-251 package is wid ely used for commercial-industrial
application.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
-30V
50mΩ
- 20A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Rating
- 30
±20
- 20
-13
-60
12.5
0.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
10
110
Units
/W
/W
Data and specifications subject to change without notice
201017075-1/4
http://www.Datasheet4U.com

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