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PDF IRG7IC28UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7IC28UPBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
PD - 97562
IRG7IC28UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
600
cVCE(ON) typ. @ IC = 40A
IRP max @ TC= 25°C
TJ max
1.70
225
150
C
V
V
A
°C
G
CE
G
E
n-channel
TO-220AB
Full-Pak
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
dRθJC Junction-to-Case
dRθJA Junction-to-Ambient
Max.
±30
25
12
225
40
16
0.32
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
–––
Max.
3.1
65
Units
V
A
W
W/°C
°C
N
Units
°C/W
www.irf.com
1
09/02/2010
http://www.Datasheet4U.com
1 page  
IRG7IC28UPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
100
Coes
Cres
10
0
100 200 300 400 500
VCE, Collector-toEmitter-Voltage(V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
6000
16
IC = 40A
14
12 VCES = 120V
10
VCES = 300V
VCES = 400V
8
6
4
2
0
0 10 20 30 40 50 60 70 80
Q G, Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
5000
4000
EOFF
3000
2000
1000
EON
0
0 10 20 30 40 50 60 70 80 90
IC (A)
Fig. 15- Typ. Energy Loss vsC. I
TJ = 150°C; L =250µH; VCE = 400V, RG = 22Ω; VGE = 15V
10
D = 0.50
1
0.20
0.10
0.1
0.01
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
R4R4
τCτ
Ri (°C/W)
0.19973
0.38341
τi (sec)
0.000268
0.002261
τ4τ4 1.17794 0.154543
1.36892 2.511
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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| PDF Descargar | [ Datasheet IRG7IC28UPBF.PDF ] | |
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