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FDP3651U fiches techniques PDF

Fairchild Semiconductor - N-Channel PowerTrench MOSFET

Numéro de référence FDP3651U
Description N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDP3651U fiche technique
October 2013
FDP3651U
N-Channel PowerTrench® MOSFET
100 V, 80 A, 18 mΩ
Features
Applications
RDS(on) = 15 m( Typ.) @ VGS = 10 V, ID = 80 A
High Performance Trench Technology for Extremely
Low RDS(on)
• Low Miller Charge
• UIS Capability (Single Pulse and Repetitive Pulse)
Consumer Appliances
Synchronous Rectification
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplie s
Micro Solar Inverter
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1)
PD
EAS
TJ, TSTG
TL
Power Dissipation
Single Pulsed Avalanche Energy
Operating and Storage Temperature
Maximum lead temperature soldering purposes,
1/8” from case for 5 seconds
(Note 2)
FDP3651U
100
±20
80
320
255
266
-55 to 175
300
Unit
V
V
A
W
mJ
°C
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient, Max.
Thermal Resistance , Junction to Case, Max.
Package Marking and Ordering Information
Device Marking
FDP3651U
Device
FDP3651U
Reel Size
Tube
62
0.59
°C/W
°C/W
Tape Width
N/A
Quantity
50 units
©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com

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