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Numéro de référence | NTE189 | ||
Description | Silicon Complementary Transistors | ||
Fabricant | NTE | ||
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NTE188 (NPN) & NTE189 (PNP)
Silicon Complementary Transistors
High Voltage Amplifier & Driver
Description:
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a T O202N type
package designed for general purpose, high voltage amplifier and driver applications.
Features:
D High Collector−Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA
D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total
PDowerearteDiAssbiopvaetio2n5°(CTC.
= +25°C),
.........
.P.D.
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. . . . 10W
80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Note 1. NTE188 is a discontinued device and is no longer available.
Note 2. RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
NTE188
NTE189
V(BR)CEO
V(BR)EBO
ICBO
IC = 1mA, IB = 0, Note 3
IE = 100μA, IC = 0
VCB = 80V, IE = 0
VCB = 60V, IE = 0
Note 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Min Typ Max Unit
80 − − V
4 − −V
− − 100 nA
− − 100 nA
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Pages | Pages 2 | ||
Télécharger | [ NTE189 ] |
No | Description détaillée | Fabricant |
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NTE180 | Silicon Power Transistor High Power Audio Amplifier | NTE |
NTE1800 | Integrated Circuit TV Multiplex Sound Decoder | NTE |
NTE1801 | Integrated Circuit TV dbx Noise Reduction System | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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