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PDF 40N25 Data sheet ( Hoja de datos )
| Número de pieza | 40N25 | |
| Descripción | FQA40N25 | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 40N25 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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FQA40N25
N-Channel QFET® MOSFET
250 V, 40 A, 70 mΩ
April 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 40 A, 250 V, RDS(on) = 70 mΩ (Max.) @ VGS = 10 V,
ID = 20 A
• Low Gate Charge ( Typ. 85nC)
• Low Crss ( Typ. 70pF)
• 100% Avalanche Tested
D
G
DS
TO-3PN
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
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©2000 Fairchild Semiconductor Corporation
FQA40N25 Rev. C2
1
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page  
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS -V DD
BVDSS
IAS
VDD ID (t)
V1G0GVSS
tp
DUT
VDD VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQA40N25 Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 40N25.PDF ] | |
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