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FR1006G fiches techniques PDF

Taiwan Semiconductor - Glass Passivated Fast Recovery Rectifiers

Numéro de référence FR1006G
Description Glass Passivated Fast Recovery Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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FR1006G fiche technique
FR1001G THRU FR1007G
Features
Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
10 Amperes
TO-220
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: TO-220 molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
PIN 1
PIN 3
CASE
PIN 2
Positive CT
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol FR FR FR FR FR FR FR Units
1001G 1002G 1003G 1004G 1005G 1006G 1007G
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current I(AV) 10 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load IFSM
(JEDEC method )
125
A
Maximum Instantaneous Forward Voltage
@ 5.0A
VF
1.3 V
Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage @ TC=125
IR
5.0 uA
100 uA
Maximum Reverse Recovery Time ( Note 1) Trr
150
250 500
nS
Typical Thermal Resistance (Note 2)
RθJC
3.0 /W
Operating and Storage Temperature Range TJ ,TSTG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink size 2" x
3" x 0.25" Al-Plate
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