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Si3443BDV Datasheet دیتاشیت PDF دانلود

دیتاشیت - Freescale - P-Channel 20-V (D-S) MOSFET

شماره قطعه Si3443BDV
شرح مفصل P-Channel 20-V (D-S) MOSFET
تولید کننده Freescale 
آرم Freescale 


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Si3443BDV شرح
Freescale
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
Si3443BDV/MC3443BDV
PRODUCT SUMMARY
VDS (V) rDS(on)m(OHM)
65 @VGS= -4.5V
-20 100 @VGS= -2.5V
150 @ VGS= -1.8V
ID(A)
-4.5
-4.2
-3.1
16
25
34
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame ter
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-20
V
±12
-4.5
-3.6 A
±20
Continuous Source Current (Diode Conduction)a
IS -1.7 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
2.0
1.3
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Symbol
R?JA
Maximum
62.5
110
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
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