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Si3443BDV Datasheet دیتاشیت PDF دانلود

دیتاشیت - Vishay - P-Channel 2.5-V (G-S) MOSFET

شماره قطعه Si3443BDV
شرح مفصل P-Channel 2.5-V (G-S) MOSFET
تولید کننده Vishay 
آرم Vishay 


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Si3443BDV شرح
P-Channel 2.5-V (G-S) MOSFET
Si3443BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)I
0.060 at VGS = - 4.5 V
- 20 0.090 at VGS = - 2.7 V
0.100 at VGS = - 2.5 V
D (A)
- 4.7
- 3.8
- 3.7
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
3 mm
16
25
34
2.85 mm
Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free)
Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Part Marking Code: 3B
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 4.7
- 3.8
- 3.6
- 2.8
Pulsed Drain Current
IDM - 20
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.3
1.1
0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 board, t 5 s.
t5s
Steady State
Steady State
RthJA
RthJF
Typical
50
90
30
For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm
Document Number: 72749
S-09-0660-Rev. C, 20-Apr-09
Maximum
62.5
110
36
Unit
°C/W
www.vishay.com
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