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PDF BC548 Data sheet ( Hoja de datos )
| Número de pieza | BC548 | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
| Logotipo |  |
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 1. Vcbo=30V, NPN Transistor - Fairchild  Hay una vista previa y un enlace de descarga de BC548 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
BC548
BC549
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in drive stage of audio amplifiers.
Pinning
1 = Collector
2 = Base
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
30
30
5
100
500
+150
-55 to +150
Unit
V
V
V
mo A
mW
C
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 30
Collector-Emitter Breakdown Volatge BVCEO 30
Emitter-Base Breakdown Volatge (1) BVEBO
5
Collector Cutoff Current
(1)
ICBO
-
Collector-Emitter Saturation Voltage VCE(sat)
-
Base-Emitter Saturation Voltage
VBE(sat)
-
(1) VBE(on)1 0.58
DC Current Gain
(1)
VBE(on)2
hFE
-
110
Transition Frequency
fT -
OBaustpeu-Et mCaitptearcOitannVceoltage
BC548
Cob
-
-
BC549
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
0.2
0.9
-
-
-
300
3.5
2
1.4
Max
-
-
-
15
0.6
1.1
0.7
0.77
800
-
6
10
4
Classification of hFE
Noise Figure
Rank
A
Range
110~220
B
200~450
NF
C
420~800
Unit
V
V
V
nA
V
V
V
V
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=2mA, VCE=5V
IC=10mA, VCE=5V
IC=2mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz, IE=0
RS=2KΩ, B=200Hz
VCE=-5V, IC=-200µA, f=1KHz,
dB
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