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PDF VUO28-12NO7 Data sheet ( Hoja de datos )
| Número de pieza | VUO28-12NO7 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO28-12NO7
K NHA D
VUO28-12NO7
3~
Rectifier
VRRM =
I3DAV =
I FSM =
1200 V
0A
120 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: ECO-PAC1
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 9 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130322a
http://www.Datasheet4U.com
1 page  
VUO28-12NO7
Rectifier
40
100
50 Hz
0.8 x V RRM
100
VR = 0 V
30
IF
20
[A]
10
TVJ =
125°C
150°C
0
0.4 0.8
TVJ = 25°C
1.2 1.6
VF [V]
80
IFSM
[A] 60
TVJ = 45°C
TVJ = 150°C
I2t
[A2s]
TVJ = 45°C
TVJ =1 50°C
40 10
2.0
10-3
10-2
10-1
100
1
t [s]
t [ms]
10
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I2t vs. time per diode
30
20
Ptot
[W]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
0.6 KW
0.8 KW
1K W
2 KW
4 KW
8 KW
40
30
IF(AV)M
20
[A]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 5 10 15 0 25 50 75 100 125 150 175
IdAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0
0 25 50 75 100 125 150
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
3.0
2.5
2.0
ZthJC
1.5
[K/W]
1.0
0.5
Constants for ZthJC calculation:
iR th (K/W)
1 1.359
20 .3286
30 .1651
40 .6473
ti (s)
0.1015
0.1026
0.4919
0.62
0.0
1
10
100
1000
10000
t[ ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130322a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VUO28-12NO7.PDF ] | |
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