G30N60B3 Datasheet PDF - Fairchild Semiconductor
| Part Number | G30N60B3 | |
| Description | HGTG30N60B3 | |
| Manufacturers | Fairchild Semiconductor | |
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Data Sheet
600 V, NPT IGBT
The HGTG30N60B3 combines the best features of high
input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The IGBT is ideal for
many high voltage switching applications operating at
moderate frequencies where low conduction losses are
essential, such as: UPS, solar inverter and power supplies.
Formerly Developmental Type TA49170.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3
TO-247
G30N60B3
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
HGTG30N60B3
November 2013
Features
• 30 A, 600 V, TC = 110°C
• Low Saturation Voltage: VCE(sat) = 1.45 V @ IC = 30 A
• Typical Fall Time. . . . . . . . 90ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
G
C
E
TO-247
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com
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HGTG30N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
300
RG = 3, L = 1mH,
VCE = 480V
250
TJ = 150oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
200
120
RG = 3, L = 1mH, VCE = 480V
100 TJ = 150oC, VGE = 10V AND 15V
80
150
100
10
20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
60
TJ = 25oC, VGE = 10V AND 15V
40
10
20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
60
300
DUTY CYCLE <0.5%, VCE = 10V
250 PULSE DURATION = 250s
200
150
TC = 25oC
100
TC = -55oC
TC = 150oC
50
0
4 5 6 7 8 9 10 11
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
16 Ig (REF) = 1mA, RL = 10, TC = 25oC
14
12
VCE = 600V
10
8
6
VCE = 200V
4
VCE = 400V
2
0
0 50 100 150
QG, GATE CHARGE (nC)
200
FIGURE 14. GATE CHARGE WAVEFORMS
10
FREQUENCY = 1MHz
8
CIES
6
4
COES
2
CRES
0
0 5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. C1
5
www.fairchildsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for G30N60B3 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ G30N60B3.PDF Datasheet ] | |
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