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Toshiba - Silicon PNP Triple Diffused Type

Numéro de référence 2SB1682
Description Silicon PNP Triple Diffused Type
Fabricant Toshiba 
Logo Toshiba 





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2SB1682 fiche technique
2SB1682
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor)
2SB1682
Power Amplifier Applications
High-Power Switching Applications
Unit: mm
High-breakdown voltage: VCEO = 160 V (min)
Complementary to 2SD2636
Maximum Ratings (Tc = 25°C)
Characteristic Sy
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC I
Pulse I
Base current
Collector power dissipation
Junction temperature
Storage temperature range
mbol
VCBO
VCEO
VEBO
C
CP
IB
PC
Tj
Tstg
Equivalent Circuit
Base
Collector
Rating
160
160
5
8
15
1
100 W
150
55 to 150
Unit
V
V
V
A
A
°C
°C
1.Base
2.Collector(heatsink)
3.Emitter
JEDEC
JEITA
TOSHIBA 2
-16C1A
Weight: 4.7 g (typ.)
30
Emitter
Electrical Characteristics (Tc = 25°C)
Characteristic S
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Turn-on Time
Switching Time
Storage Time
Fall Time
ymbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
VCB = 160 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 7 A
IC = 7 A, IB = 7 mA
VCE = 4 V, IC = 7 A
VCE = 10 V, IC = 1 A
Min Typ. Max Unit
― ― −10 µA
― ― −10 µA
160
V
500
5000 1 5000
― ― −3.0 V
― ― −3.0 V
35
MH z
ton
IB2 VCC ∼− 50 V
0. 7
IB1 7Ω Output
tstg 20µs Input IB1
1. 3
IB1 = IB2 = 7mA IB2
tf Duty Cycle < 1%
0. 7
µs
1 2005-07-27
http://www.Datasheet4U.com

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