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What is STGWA40N120KD?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "1200V short circuit rugged IGBT".


STGWA40N120KD Datasheet PDF - STMicroelectronics

Part Number STGWA40N120KD
Description 1200V short circuit rugged IGBT
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STGW40N120KD
STGWA40N120KD
40 A, 1200 V short circuit rugged IGBT with Ultrafast diode
Features
Low on-losses
High current capability
Low gate charge
Short circuit withstand time 10 µs
IGBT co-packaged with Ultrafast free-wheeling
diode
Applications
Motor control
Description
This high voltage and short-circuit rugged IGBT
utilizes the advanced PowerMESH™ process
resulting in an excellent trade-off between
switching performance and low ON-state
behavior.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Markings
STGW40N120KD
GW40N120KD
STGWA40N120KD
GWA40N120KD
Package
TO-247
TO-247 long leads
February 2012
Doc ID 15360 Rev 5
Packaging
Tube
Tube
1/15
www.st.com
15
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STGWA40N120KD equivalent
STGW40N120KD, STGWA40N120KD
Electrical characteristics
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 960 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
(see Figure 16)
3.7 mJ
- 5.7 - mJ
9.4 mJ
Eon (1) Turn-on switching losses
Eoff (2) Turn-off switching losses
VCC = 960 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
4.7 mJ
- 9.3 - mJ
Ets Total switching losses
TJ = 125 °C (see Figure 16)
14 mJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 16. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
VF Forward on-voltage
IF = 20 A
IF = 20 A, TJ = 125 °C
trr Reverse recovery time
IF = 20 A, VR = 45 V,
Qrr Reverse recovery charge di/dt = 100 A/µs
Irrm Reverse recovery current (see Figure 19)
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 20 A, VR = 45 V,
TJ = 125 °C,
di/dt = 100 A/µs
Irrm
Reverse recovery current
(see Figure 19)
Min. Typ. Max. Unit
1.9
--
1.7
V
V
84 ns
- 235 - nC
5.6 A
152 ns
- 722 - nC
9A
Doc ID 15360 Rev 5
5/15


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
STGWA40N120KDThe function is 1200V short circuit rugged IGBT. STMicroelectronicsSTMicroelectronics

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