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FIR2N60FG fiches techniques PDF

First Semiconductor - Advanced N-Ch Power MOSFET

Numéro de référence FIR2N60FG
Description Advanced N-Ch Power MOSFET
Fabricant First Semiconductor 
Logo First Semiconductor 





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FIR2N60FG fiche technique
Advanced N-Ch Power MOSFET
Switchng Regulator Application
Features
High Voltage: BVDSS=600V(Min.)
Low Crss : Crss=3.4F(Typ.)
Low gate charge : Qg= 7.0nC(Typ.)
Low RDS(on) :RDS(on)=7.0Ω(Max.)
FIR2N60FG
PIN Connection TO-220F
G
DS
D
G
S
Marking Diagram
YAWW
FIR2N60F
Y = Year
A = Assembly Location
WW = Work Week
FIR2N60F = Specific Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted) Advanced N-Ch Power MOSFET
Characteristic Symbol
Rating
Unit
Drain-source voltage
VDSS 600
V
Gate-source voltage
Drain current (DC) *
VGSS
(Tc=25)
ID (Tc=100)
±20
1.5
1
V
A
A
Drain current (Pulsed) *
IDM 6.0
A
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
PD19.1
IAS 2.0
EAS 88
IAR 2.0
EAR 8
W
A
mJ
A
mJ
Junction temperature
Storage temperature range
TJ
150
°C
Tstg -55~150
* Limited by maximum junction temperature
Characteristic Symbol
Thermal
resistance
Junction-case R
Junction-ambient R
th(J-C) -
th(J-A) -
Typ.
Max.
5.6
100
Unit
°C/W
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