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Numéro de référence | P2NA50FI | ||
Description | STP2NA50FI | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
STP2NA50
STP2NA50FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
T YPE
ST P2NA50
ST P2NA50FI
VDSS
500 V
500 V
RDS(o n)
<4 Ω
<4Ω
ID
2. 8 A
2A
s TYPICAL RDS(on) = 3.25 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s MEDIUM CURRENT, HIGH SPEED
SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sym bol
Para met er
VDS Drain- Source Vol tage (Vgs = 0)
VDGR Drain- Gate Volt age (Rgs =2 0 KΩ)
VGS Gate-S ource Voltage
ID Drain- Cur rent (cont inuous) at Tc =2 5oC2
ID Drain- Cur rent (cont inuous) at Tc =1 00oC1
IDM(•) Drain-Curre nt (Pulse d)
Pto t Tot al Dissipa tion at Tc =2 5oC7
Der at ing Fac tor
VISO Ins ulation W ithst and Voltage (DC)
Tst g Storage T empe ratur e
Tj Max Oper ating Junc tion T emper ature
(•)Pulse width limited by safe operating area
March 1996
Val ue
STP2NA5 0
STP2NA 50F I
500
500
± 30
.8 2
.8 1.25
11.2
1 1. 2
5 35
0.6 0.28
- 4000
-65 to 150
150
Un i t
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/6
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Pages | Pages 6 | ||
Télécharger | [ P2NA50FI ] |
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