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PDF HMC311SC70 Data sheet ( Hoja de datos )
| Número de pieza | HMC311SC70 | |
| Descripción | InGaP HBT GAIN BLOCK MMIC AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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HMC311SC70 / 311SC70E
v02.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Typical Applications
9 The HMC311SC70(E) is ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio & Test Equipment
Functional Diagram
Features
P1dB Output Power: +15 dBm
Output IP3: +30 dBm
Gain: 15 dB
Cascadable, 50 Ohm I/O’s
Single Supply: +5V
Industry Standard SC70 Package
General Description
The HMC311SC70(E) is a GaAs InGaP Heterojunction
Bipolar T ransistor ( HBT) G ain B lock M MIC S MT
DC to 8 G Hz a mplifier. P ackaged i n a n i ndustry
standard SC7 0, t he a mplifier c an b e u sed a s e ither
a c ascadable 5 0 O hm g ain s tage o r to d rive t he LO
port of HMC mixers with up to +15 dBm output power.
The H MC311SC70(E) of fers 1 5 d B of g ain a nd a n
output IP3 of + 30 d Bm w hile re quiring o nly 5 4 m A
from a +5V supply. The Darlington topology results in
reduced sensitivity to n ormal process variations, and
yields e xcellent g ain st ability o ver t emperature while
requiring a m inimal nu mber of e xternal b ias
components.
9 - 14
Electrical Specifications, Vs= 5V, Rbias= 22 Ohm, TA = +25° C
Gain
Parameter
Gain Variation Over Temperature
Return Loss Input / Output
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 8.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 2.0 GHz
2.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 8.0 GHz
Min.
14.0
13.0
12.5
11.0
13.5
12.0
10.0
8.0
Typ.
15.0
15.0
14.5
13.0
0.004
0.007
0.012
0.018
15
18
15.5
15.0
13.0
11.0
30
27
24
5
55
Max.
0.007
0.012
0.016
0.022
74
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Units
dB
dB
dB
dB
dB/ °C
dB/ °C
dB/ °C
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
http://www.Datasheet4U.com
1 page  
Pin Descriptions
9 Pin Number
Function
1, 2, 4, 5
GND
3 RFIN
HMC311SC70 / 311SC70E
v02.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Description
These pins must be connected to RF/DC ground.
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
6 RFOUT
RF output and DC Bias for the output stage.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.8
Rbi as
9 - 18
Recommended Component Values
Component
L1
C1, C2
50
270 nH
0.01 μF
900
56 nH
100 pF
1900
22 nH
100 pF
Frequency (MHz)
2200
2400
22 nH
15 nH
100 pF
100 pF
3500
8.2 nH
100 pF
5200
3.3 nH
100 pF
5800
3.3 nH
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC311SC70.PDF ] | |
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