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Fairchild Semiconductor - 600V N-Channel MOSFET

Numéro de référence FQD1N60C
Description 600V N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FQD1N60C fiche technique
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancem ent m ode power f ield ef fect
transistors ar e prod uced using F airchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially t ailored to
minimize on-st ate resist ance, provide superior swit ching
performance, and wit hstand high energy pulse in t he
avalanche and commutation mode. These devices are well
suited f or high ef ficiency swit ched mode pow er supplies,
active power factor cor rection, elec tronic lamp ballasts
based on half bridge topology.
Features
• 1A, 600V, RDS(on) = 11.5@VGS = 10 V
• Low gate charge ( typical 4.8nC)
• Low Crss ( typical 3.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
D-PAK
G S FQD Series
GDS
I-PAK
FQU Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)*
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD1N60C / FQU1N60C
600
1A
0.6
4A
± 30
33
1A
2.8
4.5
2.5
28
0.22
-55 to +150
300
Units
V
A
V
mJ
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2003 Fairchild Semiconductor Corporation
Typ
Max
Units
--
4.53
°C/W
-- 50 °C/W
-- 110 °C/W
Rev. A, November 2003
http://www.Datasheet4U.com

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