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Numéro de référence | FGH40N120AN | ||
Description | 1200V NPT IGBT | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
FGH40N120AN
1200V NPT IGBT
July 2008
IGBT®
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
•R oHS complaint
Applications
Induction Heating, U PS, AC & D C motor controls and general
purpose inverters.
Description
Employing NPT technolo gy, Fairchild’s AN series of IGBTs pro-
vides low conduction and switching losses. The AN series offers
an solution for application such as indu ction heating (IH), motor
control, ge neral pur pose inverter s and un interruptible pow er
supplies (UPS).
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGES
IC
ICM(1)
PD
SCWT
TJ
TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@TC = 25°C6
@TC = 100°C4
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
VCE = 600V, VGE = 15V, TC = 125°C
Operating Junction Temperature
@TC = 25°C
@TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGH40N120AN
1200
±25
4
0
160
417
167
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
µs
°C
°C
°C
Typ.
--
--
Max.
0.3
40
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGH40N120AN Rev. A2
1
www.fairchildsemi.com
http://www.Datasheet4U.com
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Pages | Pages 7 | ||
Télécharger | [ FGH40N120AN ] |
No | Description détaillée | Fabricant |
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