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Harris - N-Channel Power MOSFETs

Numéro de référence IRF542
Description N-Channel Power MOSFETs
Fabricant Harris 
Logo Harris 





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IRF542 fiche technique
Semiconductor
November 1997
IRF540, IRF541, IRF542,
IRF543, RF1S540, RF1S540SM
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,
N-Channel Power MOSFETs
Features
• 25A and 28A, 80V and 100V
• rDS(ON) = 0.077and 0.100
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field eff ect tr ansistors. The y are adv anced po wer
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdo wn avalanche mode
of operation. All of these po wer MOSFETs are designed f or
applications such as s witching regulators, switching conver-
tors, motor dr ivers, relay drivers, and dr ivers for high po wer
bipolar s witching tr ansistors requir ing high speed and lo w
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17421.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF540
TO-220AB
IRF540
IRF541
TO-220AB
IRF541
IRF542
TO-220AB
IRF542
IRF543
TO-220AB
IRF543
RF1S540
TO-262AA
RF1S540
RF1S540SM
TO-263AB
RF1S540SM
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number
2309.3
http://www.Datasheet4U.com

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