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NVD3055-150 fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NVD3055-150
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NVD3055-150 fiche technique
NTD3055-150,
NVD3055-150
Power MOSFET
9.0 A, 60 V, NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 10 MW)
GatetoSource Voltage
Continuous
Nonrepetitive (tpv10 ms)
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tpv10 ms)
Total Power Dissipation
Derate above 25°C
@
TA
=
25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
ID
ID
IDM
PD
TJ, Tstg
EAS
9.0
3.0
27
28.8
0.19
2.1
1.5
55 to 175
30
Adc
Apk
W
W/°C
W
W
°C
mJ
RRRqqqJJJCAA
TL
°C/W
5.2
71.4
100
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
http://onsemi.com
9.0 AMPERES, 60 VOLTS
RDS(on) = 122 mW (Typ)
NChannel
D
G
S
12
3
1 23
MARKING
DIAGRAMS
4
Drain
4 DPAK
CASE 369C
STYLE 2
“SURFACE MOUNT”
1
Gate
2
Drain
3
Source
4
DPAK3
CASE 369D
STYLE 2
“STRAIGHT LEAD”
4
Drain
12 3
Gate Drain Source
3150
Y
WW
G
= Device Code
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
January, 2013 Rev. 5
1
Publication Order Number:
NTD3055150/D
http://www.Datasheet4U.com

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