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IRFB3607GPBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFB3607GPBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFB3607GPBF fiche technique
PD - 96329
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
l Lead-Free
l Halogen-Free
G
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÙAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
jRθJC Junction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface, TO-220
RθJA Junction-to-Ambient, TO-220
IRFB3607GPbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
75V
7.34m:
9.0m:
80A
D
G
Gate
S
D
G
TO-220AB
IRFB3607GPbF
D
Drain
S
Source
Max.
80™
56™
310
140
0.96
± 20
27
-55 to + 175
300
x x10lb in (1.1N m)
120
46
14
Typ.
–––
0.50
–––
Max.
1.045
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1http://www.Datasheet4U.com
08/12/10

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