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DMS05N60 fiches techniques PDF

Bruckewell Technology - N-Channel Depletion-Mode MOSFET

Numéro de référence DMS05N60
Description N-Channel Depletion-Mode MOSFET
Fabricant Bruckewell Technology 
Logo Bruckewell Technology 





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DMS05N60 fiche technique
DMS05N60 N-Channel Depletion-Mode MOSFET
FEATURES
Depletion Mode (Normally On)
Advanced Planar Technology
Rugged Poly-silicon Gate Cell Structure
Fast Switching Speed
RoHS Compliant/Lead Free
ESD Sensitive
Applications
BVDSX
600V
RDS(ON) (Max.)
700Ω
Normally-on Switches
SMPS start-up Circuit
Linear Amplifier
Converters
Constant Current Source
Telecom
IDSS,min
12mA
Absolute Maximum Ratings TA=25unless otherwise specified
Symbol
Parameter
DMS05N60
Unit
VDSX
VDGX
Drain-to-Source Voltage [1]
Drain-to-Gate Voltage [1]
600 V
600 V
ID Continuous Drain Current
IDM Pulsed Drain Current
0.020
0.081
A
PD Power Dissipation
0.50
W
VGS Gate-to-Source Voltage
±20 V
TL
TJ and TSTG
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
Operating and Storage Temperature Range
300
-55~150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings “may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
RθJA Thermal Resistance, Junction-to-Ambient
DMS05N60
250
Unit
K/W
©Bruckewell Technology Corporation Rev. A -2012
http://www.Datasheet4U.com

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