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Numéro de référence | DMS05N60 | ||
Description | N-Channel Depletion-Mode MOSFET | ||
Fabricant | Bruckewell Technology | ||
Logo | |||
DMS05N60 N-Channel Depletion-Mode MOSFET
FEATURES
• Depletion Mode (Normally On)
• Advanced Planar Technology
• Rugged Poly-silicon Gate Cell Structure
• Fast Switching Speed
• RoHS Compliant/Lead Free
• ESD Sensitive
Applications
BVDSX
600V
RDS(ON) (Max.)
700Ω
• Normally-on Switches
• SMPS start-up Circuit
• Linear Amplifier
• Converters
• Constant Current Source
• Telecom
IDSS,min
12mA
Absolute Maximum Ratings TA=25℃ unless otherwise specified
Symbol
Parameter
DMS05N60
Unit
VDSX
VDGX
Drain-to-Source Voltage [1]
Drain-to-Gate Voltage [1]
600 V
600 V
ID Continuous Drain Current
IDM Pulsed Drain Current
0.020
0.081
A
PD Power Dissipation
0.50
W
VGS Gate-to-Source Voltage
±20 V
TL
TJ and TSTG
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
Operating and Storage Temperature Range
300
-55~150
℃
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings “may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
RθJA Thermal Resistance, Junction-to-Ambient
DMS05N60
250
Unit
K/W
©Bruckewell Technology Corporation Rev. A -2012
http://www.Datasheet4U.com
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Pages | Pages 3 | ||
Télécharger | [ DMS05N60 ] |
No | Description détaillée | Fabricant |
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