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PDF 2SA1386B Data sheet ( Hoja de datos )
| Número de pieza | 2SA1386B | |
| Descripción | Silicon PNP Epitaxial Planar Transistor | |
| Fabricantes | NELL SEMICONDUCTOR | |
| Logotipo |  |
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SEMICONDUCTOR
2SA1386B Series RRooHHSS
Nell High Power Products
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3519B)
-15A/-160V,-180V/130W
15.6±0.4
9.6
4.8±0.2
2.0±0.1
TO-3P(B)
FEATURES
Recommend for 105W high Fiderity audio frequency
amplifier output stage
Complement to type 2SC3519B & 2SC3519B-A
APPLICATIONS
Audio and general purpose
Φ3.2±0,1
2
3
1.05
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
0.65
+0.2
-0.1
1.4
12 3
B
All dimensions in millimeters
C
E PNP
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
ICP (ICM)
IC
IB
PC
Tj
Tstg
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation
Derate above 25°C
Junction temperature
Storage temperature
TC= 25°C
VALUE
2SA1386B 2SA1386B-A
-160
-180
-160
-180
-5
-30
-15
-4
130
1.04
150
-55 to 150
UNIT
V
A
W
W/°C
ºC
THERMAL CHARACTERISTICS (Ta=25°C unless otherwise specified)
SYMBOL
PARAMETER
Rth(j-a)
Maximum thermal resistance, junction to ambient
VALUE
1.65
UNIT
°C/W
www.nellsemi.com
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1386B.PDF ] | |
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