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Numéro de référence | 10N60Z | ||
Description | 10A 600V N-CHANNEL POWER MOSFET | ||
Fabricant | UNISONIC TECHNOLOGIES | ||
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UNISONIC TECHNOLOGIES CO., LTD
10N60Z
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UT C 10N 60Z is a hi gh voltage an d hi gh curre nt po wer
MOSFET, designe d to have better c haracteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This po wer MOSFET is
usually use d at high s peed s witching a pplications in po wer
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) = 0.75Ω@VGS =10V
* Low gate charge ( typical 44nC)
* Low CRSS ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N60ZL-TF1-T
10N60ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-936,A
http://www.Datasheet4U.com
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Pages | Pages 8 | ||
Télécharger | [ 10N60Z ] |
No | Description détaillée | Fabricant |
10N60 | N-Channel Power MOSFET / Transistor | nELL |
10N60 | N-Channel Mosfet Transistor | Inchange Semiconductor |
10N60 | 600/650 Volts N-CHANNEL POWER MOSFET | Unisonic Technologies |
10N60 | N-CHANNEL MOSFET | CHONGQING PINGYANG |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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