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C5881 fiches techniques PDF

ROHM Semiconductor - NPN Transistor - 2SC5881

Numéro de référence C5881
Description NPN Transistor - 2SC5881
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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C5881 fiche technique
Transistors
Power transistor (60V, 5A)
2SC5881
2SC5881
zFeatures
1) High speed switching.
(Tf : Typ. : 25ns at IC = 5A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 3.0A, IB = 300mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2096
zApplications
Low frequency amplifier
High speed switching
zExternal dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
5.5 1.5
0.9
C0.5
(1) Base
(2) Collector
(3) Emitter
0.8Min. 2.5 1.5
9.5
(x1 / 2)
Each lead has same dimensions
Symbol : C5881
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Type
Package
Code
2SC5881
Basic ordering unit (pieces)
Taping
TL
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
Power dissipation
PC
Junction temperature
Range of storage temperature
1 Pw=10ms, non repetitive pulse
2 Ta=25°C
3 Tc=25°C
Tj
Tstg
Limits
100
100
60
6.5
5.0
10.0
1.0
10.0
150
55 to 150
Unit
V
V
V
V
A
A 1
W 2
W 3
°C
°C
Rev.B
1/3
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