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PDF FTP10N40 Data sheet ( Hoja de datos )
| Número de pieza | FTP10N40 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | IPS | |
| Logotipo |  |
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N-Channel MOSFET
Applications:
• Ballast and Lighting
• DC-AC Inverter
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP10N40
PACKAGE
TO-220
BRAND
FTP10N40
FTP10N40
Pb Lead Free Package and Finish
VDSS
400V
RDS(ON) (Max.)
0.55 Ω
ID
10A
D
G DS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC1
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=500 µH, ID=28.3 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
Maximum
400
10
Figure 3
Figure 6
139
.11
± 30
200
Figure 8
3.0
300
260
-55 to 150
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Min.
--
--
Typ.
--
--
Max.
0.9
62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2006 InPower Semiconductor Co., Ltd.
FTP10N40 REV. B Oct. 2006
http://www.Datasheet4U.com
1 page  
1000
100
Figure 6. Maximum Peak Current Capability
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1--5----0---–----T---C--
125
10
VGS = 10V
1
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
20 PULSE DURATION = 250 µs
18 DUTY CYCLE = 0.5% MAX
VDS = 10 V
16
14
12
10
8
6 +150 oC
4
+25 oC
-55 oC
2
0
34
5
6
7
VGS, Gate-to-Source Voltage (V)
8
Figure 8. Unclamped Inductive
Switching Capability
100
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
10
STARTING TJ = 150 oC
STARTING TJ = 25 oC
1
1E-6
10E-6
100E-6
1E-3
tAV, Time in Avalanche (s)
10E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
1.25
1.00
PULSE DURATION = 2 µs
DUTY CYCLE = 0.5% MAX
TC=25°C
0.75
VGS = 10V
0.50
0.25
05
10 15 20
ID, Drain Current (A)
25
30
©2006 InPower Semiconductor Co., Ltd.
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25
0
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 10A
25 50 75 100 125 150
TJ, Junction Temperature (oC)
FTP10N40 REV. B Oct. 2006
Page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FTP10N40.PDF ] | |
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