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NEC - MOSFET ( Transistor ) - 2SK3455

Numéro de référence K3455
Description MOSFET ( Transistor ) - 2SK3455
Fabricant NEC 
Logo NEC 





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K3455 fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3455
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3455 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, designed for high voltage applications
such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3455
Isolated TO-220
FEATURES
Low gate charge
QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 6.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25°C)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
500
±30
±12
±36
2.0
V
V
A
A
W
Total Power Dissipation (TC = 25°C) PT2 50 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg 55 to +150
Single Avalanche Current Note2
IAS 12
Single Avalanche Energy Note2
EAS 103
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 0 V
°C
A
mJ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14757EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2000
http://www.Datasheet4U.com

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