NP80N06MLG Datasheet PDF - NEC
| Part Number | NP80N06MLG | |
| Description | MOS FIELD EFFECT TRANSISTOR | |
| Manufacturers | NEC | |
| Logo |  |
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To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
http://www.Datasheet4U.com
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NP80N06MLG, NP80N06NLG, NP80N06PLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SY
MBOL
TEST CONDITIONS M
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)1
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 35 A
VGS = 10 V, ID = 40 A
NP80N06MLG, NP80N06NLG
IN. TYP. MAX.
1
±10
1.4 2.5
25 59
6.7 8.6
VGS = 10 V, ID = 40 A
NP80N06PLG
6.2 8.3
RDS(on)2
VGS = 4.5 V, ID = 35 A
NP80N06MLG, NP80N06NLG
8.4 13.3
VGS = 4.5 V, ID = 35 A
NP80N06PLG
7.6 1
3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed test
Ciss
Coss
Crss f
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = 25 V,
VGS = 0 V,
= 1 MHz
VDD = 30 V, ID = 40 A,
VGS = 10 V,
RG = 0 Ω
VDD = 48 V,
VGS = 10 V,
ID = 80 A
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/μs
4600
370
220
17
13
70
7
85
14
25
0.96
41
56
6900
560
400
37
33
140
18
128
1.5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
UNIT
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D19798EJ1V0DS
3
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NP80N06MLG electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NP80N06MLG.PDF Datasheet ] | |
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