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PDF CLA50E1200TC Data sheet ( Hoja de datos )
| Número de pieza | CLA50E1200TC | |
| Descripción | High Efficiency Thyristor | |
| Fabricantes | IXYS | |
| Logotipo |  |
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High Efficiency Thyristor
Single Thyristor
Part number
CLA50E1200TC
CLA50E1200TC
V=RRM
I=TAV
VT
=
1200 V
50 A
1.27 V
21
3
Backside: anode
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: TO-268AA (D3Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121221b
http://www.Datasheet4U.com
1 page  
CLA50E1200TC
Thyristor
150
120
600 10000
50 Hz, 80% VRRM
VR = 0V
500
IT 90
[A] 60
ITSM 400
TVJ = 45°C
[A] 300 TVJ = 125°C
I2t
1000
[A2s]
TVJ = 45°C
TVJ = 125°C
30 TVJ = 125°C
TVJ = 25°C
0
0.0 0.5 1.0 1.5 2.0 2.5
VT [V]
Fig. 1 Forward characteristics
200
100
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
ITSM: crest value, t: duration
100
1
2 3 4 5 6 7 8 910
t[ ms]
Fig. 3 I2t versus time (1-10 s)
10 1000
80
1: IGD, TVJ = 150°C
2: IGT,T VJ =2 5°C
3: IGT, TVJ = -40°C
VG
1
[V]
1
23
45
6
100
tgd
[ s]
10
TVJ = 125°C
70
60
50
ITAVM
40
[A]
30
dc =
1
0.5
0.4
0.33
0.17
0.08
4: PGAV =0 .5 W
5: PGM =1 W
6: PGM = 10 W
0.1
1
10 100 1000 10000
IG [mA]
Fig. 4 Gate voltage & gate current
lim.
typ.
1
10 100 1000
IG [A]
Fig. 5 Gate controlled delay time tgd
20
10
0
0 40 80 120 160
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
100
80
P(AV)
60
[W]
40
dc =
1
0.5
0.4
0.33
0.17
0.08
RthHA
0.4
0.6
0.8
1.0
2.0
4.0
20
0
0 20 40 60 0
50 100 150
IF(AV) [A]
Tamb [°C]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0.3
0.2
ZthJC
0.1
[K/W]
0.0
i Rthi (K/W)
1 0.075
2 0.17
3 0.057
4 0.158
5 0.0105
ti (s)
0.0011
0.0019
0.0115
0.12
0.5
0.001
0.01
0.1
t[ s]
1
10
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121221b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CLA50E1200TC.PDF ] | |
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