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PDF BAV99S3 Data sheet ( Hoja de datos )

Número de pieza BAV99S3
Descripción High speed double diode
Fabricantes CYStech Electronics 
Logotipo CYStech Electronics Logotipo



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CYStech Electronics Corp.
High –speed double diode
BAV99S3
Spec. No. : C328S3
Issued Date : 2009.09.25
Revised Date : 2010.10.21
Page No. : 1/6
Description
The BAV99S3 consists of two high-speed switching diodes connected in series, fabricated in planar
technology, and encapsulated in the small SOT-323 plastic SMD package.
Equivalent Circuit
BAV99S3
21
3
1Anode
2Cathode
3Common connection
Outline
SOT-323
Common connection
Cathode
Anode
Features
Small plastic SMD package
High switching speed: max. 4ns
Continuous reverse voltage: max. 100V
Repetitive peak reverse voltage: max. 110V
Repetitive peak forward current: max. 450mA.
Pb-free package
Applications
High-speed switching in thick and thin-film circuits.
BAV99S3
CYStek Product Specification
http://www.Datasheet4U.com

1 page




BAV99S3 pdf
CYStech Electronics Corp.
Spec. No. : C328S3
Issued Date : 2009.09.25
Revised Date : 2010.10.21
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
Temperature Min(TS min)
Temperature Max(TS max)
Time(ts min to ts max)
Time maintained above:
Temperature (TL)
Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5 °C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BAV99S3
CYStek Product Specification

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