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PDF B943 Data sheet ( Hoja de datos )
| Número de pieza | B943 | |
| Descripción | PNP Transistor - 2SB943 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Power Transistors
2SB943
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1268
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–130
–80
–7
–6
–3
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
13 2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = –100V, IE = 0
VEB = –5V, IC = 0
–10 µA
–50 µA
Collector to emitter voltage
VCEO
IC = –10mA, IB = 0
–80
V
Forward current transfer ratio
hFE1
hFE2*
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = – 0.5A
45
90 260
Collector to emitter saturation voltage VCE(sat)
IC = –2A, IB = – 0.1A
– 0.5
V
Base to emitter saturation voltage VBE(sat)
IC = –2A, IB = – 0.1A
–1.5 V
Transition frequency
fT VCE = –10V, IC = – 0.5A, f = 10MHz
30
MHz
Turn-on time
Storage time
Fall time
ton IC = – 0.5A,
tstg
tf
IB1 = –50mA, IB2 = 50mA
0.3 µs
1.1 µs
0.3 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet B943.PDF ] | |
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