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NVF2955P fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NVF2955P
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NVF2955P fiche technique
NTF2955, NVF2955,
NVF2955P
Power MOSFET
60 V, 2.6 A, Single PChannel SOT223
Features
Design for low RDS(on)
Withstands High Energy in Avalanche and Commutation Modes
AECQ101 Qualified NVF2955, NVF2955P
These Devices are PbFree and are RoHS Compliant
Applications
Power Supplies
PWM Motor Control
Converters
Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
DraintoSource Voltage
VDSS
GatetoSource Voltage
VGS
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
ID
Power Dissipation
(Note 1)
Steady TA = 25°C
State
PD
Value
60
±20
2.6
2.0
2.3
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
1.7
1.3
1.0
Unit
V
V
A
W
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse DraintoSource Avalanche
Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A,
L = 10 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
IDM
TJ,
TSTG
EAS
17
55 to
175
225
A
°C
mJ
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoTab (Drain) Steady State (Note 2) RqJC
14
JunctiontoAmbient Steady State (Note 1)
RqJA
65 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127
in2 [1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in2)
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 6
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
145 mW @ 10 V
PChannel
D
ID MAX
2.6 A
G
S
MARKING DIAGRAMS AND
PIN ASSIGNMENT
4 Drain
4
123
SOT223
CASE 318E
STYLE 3
1
Gate
AYW
2955G
G
2
Drain
4 Drain
3
Source
AYW
2955PG
G
1
Gate
2
Drain
3
Source
A = Assembly Location
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTF2955T1G
SOT223 1000 /Tape & Reel
(PbFree)
NVF2955T1G
SOT223 1000/ Tape & Reel
(PbFree)
NVF2955PT1G SOT223 1000/ Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTF2955/D
http://www.Datasheet4U.com

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