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Integrated Device Technology - HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

Numéro de référence IDT70V261S
Description HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
Fabricant Integrated Device Technology 
Logo Integrated Device Technology 





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IDT70V261S fiche technique
HIGH-SPEED 3.3V
16K x 16 DUAL-PORT
Š STATIC RAM
IDT70V261S/L
Features
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 25/35/55ns (max.)
– Industrial: 25ns (max.)
Low-power operation
– IDT70V261S
Active: 300mW (typ.)
Standby: 3.3mW (typ.)
– IDT70V261L
Active: 300mW (typ.)
Standby: 660µW (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
IDT70V261 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = VIH for BUSY output flag on Master
M/S = VIL for BUSY input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 3.3V (±0.3V) power supply
Available in a 100-pin TQFP, Thin Quad Plastic Flatpack
Industrial temperature range (-40°C to +85°C) is available
for selected speed
Green parts available, see ordering information
Functional Block Diagram
R/WL
UBL
R/WR
UBR
LBL
CEL
OEL
LBR
CER
OER
I/O8L-I/O15L
I/O0L-I/O7L
BUSYL(1,2)
A13L
A0L
I/O
Control
I/O
Control
Address
Decoder
14
CEL
OEL
R/WL
MEMORY
ARRAY
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
14
SEML
INTL(2)
NOTES:
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.
2. BUSY and INT outputs are non-tri-stated push-pull.
©2012 Integrated Device Technology, Inc.
M/S
1
Address
Decoder
I/O8R-I/O15R
I/O0R-I/O7R
BUSYR (1,2)
A13R
A0R
CER
OER
R/WR
SEMR
INTR(2)
3040 drw 01
SEPTEMBER 2012
DSC-3040/11
http://www.Datasheet4U.com

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