|
|
PDF SKM600GA12E4 Data sheet ( Hoja de datos )
| Número de pieza | SKM600GA12E4 | |
| Descripción | IGBT | |
| Fabricantes | Semikron | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SKM600GA12E4 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
SKM600GA12E4
SEMITRANS®4
IGBT4 Modules
SKM600GA12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• AC inverter drives
•U PS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
• Short circuit: Soft Turn-off
recommended RGoff > 20 Ω
• With RG = 2Ω the RBSOA is limited to
1 x ICnom = 600 A
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tc = 25 °C
Tc =8 0° C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc =2 5° C
Tc =8 0° C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj =2 5° C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj =2 5° C
VGE =1 5V
Tj = 150 °C
Tj =2 5° C
Tj = 150 °C
VGE=VCE, IC =2 4m A
VGE =0V
VCE = 1200 V
Tj =2 5° C
Tj = 150 °C
VCE =2 5 V
VGE =0V
f=1M Hz
f=1M Hz
f=1M Hz
VGE =- 8 V...+ 15 V
Tj =2 5° C
VCC = 600 V
Tj = 150 °C
IC =6 00 A
Tj = 150 °C
VGE =± 15 V
RG on =2 Ω
RG off =2 Ω
Tj = 150 °C
Tj = 150 °C
di/dton = 6000 A/µs Tj = 150 °C
di/dtoff = 5200 A/µs Tj = 150 °C
per IGBT
Values
1200
916
704
600
1800
-20 ... 20
10
-40 ... 175
707
529
600
1800
3240
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.8
2.2
0.8
0.7
1.7
2.5
5.8
0.1
37.2
2.32
2.04
3400
1.3
195
90
74
690
130
84
max. Unit
2.05
2.4
0.9
0.8
1.9
2.7
6.5
0.3
0.049
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GA
© by SEMIKRON
Rev. 2 – 16.06.2009
1
http://www.Datasheet4U.com
1 page  
SKM600GA12E4
Semitrans 4
GA
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 2 – 16.06.2009
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SKM600GA12E4.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SKM600GA12E4 | IGBT | Semikron |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |