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MBR3045CT fiches techniques PDF

Pan Jit International - SCHOTTKY BARRIER RECTIFIER

Numéro de référence MBR3045CT
Description SCHOTTKY BARRIER RECTIFIER
Fabricant Pan Jit International 
Logo Pan Jit International 





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MBR3045CT fiche technique
MBR3020CT~MBR30100CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts CURRENT 30.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
MECHANICAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.083 ounce s, 2.24gra ms.
.038(0.96)
.019(0.50)
.1(2.54)
.025(0.65)MAX
.1(2.54)
Positive CT
AC
AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL MBR3020CT MBR3030CT MBR3035CT MBR3040CT MBR3045CT MBR3045CT MBR3050CT MBR3060CT MBR3080CT MBR30100CT UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM 20 30 35 40 45 45 50 60 80 100 V
Maximum RMS Voltage
VRMS 14 21 24.5 28 31.5 31.5 35 42 56 70 V
Maximum DC Blocking Voltage
VDC 20 30 35 40 45 45 50 60 80 100 V
Maximum Average Forward Current lead length at
TC=90OC
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IF (AV )
IF S M
30
275
A
A
MVaximum Forward Voltage at 15A, per leg
F
00. 5 5
00.7 0V.8
Maximum DC Reverse Current TJ=25 OC
at Rated DC Blocking Voltage TJ=100OC
IR
0.1
20
mA
TRypical Thermal Resistance
θJC
1.5 OC / W
OTperating Junction and Storage Temperature Range J,TS TG
-50 TO + 150
OC
NOTES:
Both Bonding and Chip structure are available.
STAD-MAR.14.2006
PAGE . 1
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