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2SB183060MA fiches techniques PDF

Silan - LOW IR SCHOTTKY BARRIER DIODE CHIPS

Numéro de référence 2SB183060MA
Description LOW IR SCHOTTKY BARRIER DIODE CHIPS
Fabricant Silan 
Logo Silan 





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2SB183060MA fiche technique
2SB183060MA
2SB183060MA SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB183060MA is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Ø Low power losses, high efficiency;
Ø High ESD capability;
Ø High surge capability;
Ø Guard ring construction for transient protection;
Ø Packaged products are widely used in switching power
suppliers, polarity protection circuits and other electronic
circuits.
ORDERING SPECIFICATIONS
Product Name
2SB183060MAYY
CHIP INFORMATION
Item
Wafer Size
Gross Die
Die Size(La)
Top Pad Size(Lb)
Wafer Thickness(Lc)
Top Metal / Thickness
Back Metal / Thickness
Passivation
Scribe Line Width
Chip Topography
Specification
Top metal is Ag, for solder process;
Back metal is Ag, for solder process.
Characterization
5Inch
3,232dice/wafer
1830µm
1690µm
280±20µm
Ag:5µm
Ag:1.2µm
SiO2
50µm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:2.0 2010.03.18
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