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Niko-Sem - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Numéro de référence P70N02LS
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fabricant Niko-Sem 
Logo Niko-Sem 





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P70N02LS fiche technique
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P70N02LS
TO-263 (D2PAK)
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 7mΩ
ID
70A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS ±
ID
IDM
IAR
EAS
EAR
PD
Tj, Tstg
TL 275
LIMITS
20
70
45
170
60
140
5.6
65
38
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
0.6
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER SY
MBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS V
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
DS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN T YP MAX
25
1 1.5
3
±250
25
250
V
nA
µA
1 MAY-24-2001
http://www.Datasheet4U.com

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