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TOSHIBA - Discrete IGBTs Silicon N-Channel IGBT

Numéro de référence GT40RR21
Description Discrete IGBTs Silicon N-Channel IGBT
Fabricant TOSHIBA 
Logo TOSHIBA 





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GT40RR21 fiche technique
Discrete IGBTs Silicon N-Channel IGBT
GT40RR21
GT40RR21
1. Applications
• Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation
(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf = 0.21 µs (typ.) (IC = 40 A)
FWD : trr = 0.60 µs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 2.05 V (typ.) (IC = 40 A)
(6) High junction temperature : Tj = 175(max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate
2: Collector
3: Emitter
1 2012-07-03
Rev.1.0
http://www.Datasheet4U.com

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