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WEJ - NPN Transistor

Numéro de référence S9011
Description NPN Transistor
Fabricant WEJ 
Logo WEJ 





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S9011 fiche technique
RoHS
S9011
S9011 TRANSISTOR (NPN)
DF EATURE
Pow er dissipation
TP CM:
0 .31 W (Tamb=25)
.,LCo llector current
I CM: 0 .03
C ollector-base voltage
A
OV (BR)CBO:
30 V
Operating and storage junction temperature range
CTj, Tstg: - 55to +150
TO-92
1 . EMITTER
2. BASE
3. COLLECTOR
123
ICE LECTRICAL CH ARACTERISTICS (Tamb=25u nless o therwise sp ecified)
P arameter
NCollector-base breakdown voltage
OCollector-emitter breakdown voltage
Emitter-base breakdown voltage
RCollector cut-off current
TCollector cut-off current
CEmitter cut-off current
EDC current gain
LCollector-emitter saturation voltage
EBase-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO V
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
Test conditions
Ic= 100µA, IE=0 30
IC= 0.1mA , IB=0 20
IE= 100µA, IC=0 4
CB=16V, IE=0
VCB=16V, IE=0
VEB= 3.5V, IC=0
VCE=5V, IC=1mA 28
IC= 10 mA, IB= 1mA
IC= 10 mA, IB= 1mA
MIN
TYP MAX UNIT
V
V
V
0.1 µA
0.1 µA
0.1 µA
270
0.3 V
1V
JTransition frequency
VCE=5V, IC=1mA,
fT
f=30MHz
150
MHz
WECLASSIFICATION OF hFE(1)
Rank D
E F G H IJ
Range
28-45 39-
60 54-
80
72-108
97-146
132-198
180-270
WEJ ELECTRONIC CO.
Http:// www.wej.cn E-mail:[email protected]
http://www.Datasheet4U.com

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